Tunable double quantum dots in InAs nanowires defined by local gate electrodes

被引：145

作者：

Fasth, C ^{[1
]}

Fuhrer, A ^{[1
]}

Björk, MT ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

NANO LETTERS | 2005年 / 5卷 / 07期

关键词：

D O I：

10.1021/nl050850i

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.

引用

页码：1487 / 1490

页数：4

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