Free electron properties and hydrogen in InN grown by MOVPE

被引：7

作者：

Darakchieva, V. ^{[1
,2
]}

Xie, M. -Y. ^{[1
,2
]}

Rogalla, D. ^{[3
]}

Becker, H. -W. ^{[3
]}

Lorenz, K. ^{[1
]}

Alves, E. ^{[1
]}

Ruffenach, S. ^{[4
]}

Moret, M. ^{[4
]}

Briot, O. ^{[4
]}

机构：

[1] Inst Tecnol & Nucl, P-2686953 Sacavem, Portugal

[2] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[3] Ruhr Univ Bochum, D-44780 Bochum, Germany

[4] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier, France

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 05期

基金：

瑞典研究理事会;

关键词：

free electron properties; hydrogen; InN; unintentional doping; FILMS; ELLIPSOMETRY; ANISOTROPY; NITRIDE; STRAIN;

D O I：

10.1002/pssa.201001151

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we present a comprehensive study on the hydrogen impurities, free electron, and structural properties of MOVPE InN films with state-of-the-art quality. We find a correlation between the decrease of free electron concentration and the reduction of bulk hydrogen in the films upon thermal annealing, while no changes in the dislocation densities and strain are observed. Our results suggest that hydrogen is a major source for the unintentional n-type doping in MOVPE InN. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1179 / 1182

页数：4

共 23 条

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