Effect of the oxide layer on the interfacial Dyzaloshinskii-Moriya interaction in perpendicularly magnetized Pt/Co/SmOx and Pt/Co/AlOx heterostructures

被引：9

作者：

Li, Dong ^{[1
,2
]}

Ma, Rui ^{[1
,2
]}

Cui, Baoshan ^{[3
]}

Yun, Jijun ^{[3
]}

Quan, Zhiyong ^{[1
,2
]}

Zuo, Yalu ^{[3
]}

Xi, Li ^{[3
]}

Xu, Xiaohong ^{[1
,2
]}

机构：

[1] Shanxi Normal Univ, Res Inst Mat Sci, Linfen 041004, Shanxi, Peoples R China

[2] Shanxi Normal Univ, Sch Chem & Mat Sci, Minist Educ, Key Lab Magnet Mol & Magnet Informat Mat, Linfen 041004, Shanxi, Peoples R China

[3] Lanzhou Univ, Sch Phys Sci & Technol, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2020年 / 513卷

基金：

中国国家自然科学基金;

关键词：

Dyzaloshinskii-Moriya interaction; Perpendicular magnetic anisotropy; Spin-orbit torque; Domain wall motion; Element electronegativity; SPIN-TORQUE; DRIVEN;

D O I：

10.1016/j.apsusc.2020.145768

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interfacial Dyzaloshinskii-Moriya interaction (DMI) plays a crucial role in stabilizing a chiral Neel-type magnetic domain wall in perpendicularly magnetized multilayers. In this work, we investigate the effect of oxide layers on interfacial DMI in ultrathin Pt/Co/SmOx and Pt/Co/AlOx stacks with the perpendicular magnetic anisotropy. The DMI effective field was characterized using the field driven domain wall creep and currentinduced hysteresis loop shift methods. The experimental results show that an enhanced interfacial DMI is obtained in Pt/Co/SmOx, stacks, which may be related to the oxidation degrees of the Co layer in view of the difference of Co/metallic oxide interfaces. Moreover, the X-ray photoelectron spectroscopy with the argon ion etching technique was used to further verify the weaker oxidation of the Co layer existed in Pt/Co/SmOx, than that in Pt/Co/AlOx in the same annealing process due to the smaller electronegativity of the Sm compared to the Al element. Our results provide a promising route to effectively manipulate the interfacial DMI in spin-orbittorque-based spintronic devices through the element electronegativity.

引用

页数：7

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