Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

被引：7
作者：
Li, Zhiwei [1 ]
Zhang, Biao [1 ]
Wang, Jun [1 ]
Liu, Jianming [1 ]
Liu, Xianglin [1 ]
Yang, Shaoyan [1 ]
Zhu, Qinsheng [1 ]
Wang, Zhanguo [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2011年 / 6卷
基金：
美国国家科学基金会;
关键词：
PHOTOEMISSION-SPECTROSCOPY; INN EPILAYERS; DISCONTINUITIES; FILMS; ALN; GAN;
D O I：
10.1186/1556-276X-6-193
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 +/- 0.23 eV and the conduction band offset is deduced to be 1.30 +/- 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.
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页数：4
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