Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

被引：7

作者：

Li, Zhiwei ^{[1
]}

Zhang, Biao ^{[1
]}

Wang, Jun ^{[1
]}

Liu, Jianming ^{[1
]}

Liu, Xianglin ^{[1
]}

Yang, Shaoyan ^{[1
]}

Zhu, Qinsheng ^{[1
]}

Wang, Zhanguo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

基金：

美国国家科学基金会;

关键词：

PHOTOEMISSION-SPECTROSCOPY; INN EPILAYERS; DISCONTINUITIES; FILMS; ALN; GAN;

D O I：

10.1186/1556-276X-6-193

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 +/- 0.23 eV and the conduction band offset is deduced to be 1.30 +/- 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.

引用

页数：4

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