Electron-nuclear double resonance of deep-boron acceptors in silicon carbide

被引：6

作者：

Baranov, PG ^{[1
]}

Mokhov, EN ^{[1
]}

Hofstetter, A ^{[1
]}

Sharmann, A ^{[1
]}

机构：

[1] UNIV GIESSEN, INST PHYS 1, D-35392 GIESSEN, GERMANY

来源：

JETP LETTERS | 1996年 / 63卷 / 10期

关键词：

D O I：

10.1134/1.567101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electron-nuclear double resonance spectra of deep-boron accepters in silicon carbide have been observed. The quadrupole and hyperfine interaction constants are determined. A sharp decrease of the quadrupole interaction and suppression of the anisotropic part of the hyperfine interaction, as compared with shallow-boron accepters, are found, The observed effects are explained by the motion of holes inside the deep-boron acceptor. (C) 1996 American Institute of Physics.

引用

页码：848 / 854

页数：7

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