2D MATERIALS Memristor goes two-dimensional

被引：35

作者：

Yuan, Jiangtan ^{[1
]}

Lou, Jun ^{[1
]}

机构：

[1] Rice Univ, Dept Mat Sci & Nanoengn, Houston, TX 77005 USA

来源：

NATURE NANOTECHNOLOGY | 2015年 / 10卷 / 05期

关键词：

D O I：

10.1038/nnano.2015.94

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A single layer of MoS2 can be used to fabricate a memristor by exploiting structural defects in the crystal.

引用

页码：389 / 390

页数：2

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