Investigation of Post Oxidation Annealing Effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs

被引：9

作者：

Liu, Han-Yin ^{[1
]}

Ou, Wen-Chia ^{[2
]}

Hsu, Wei-Chou ^{[3
]}

机构：

[1] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[2] United Microelect Corp, Tainan 74147, Taiwan

[3] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2016年 / 4卷 / 05期

关键词：

AlGaN/GaN heterostructure; aluminum oxide (Al2O3); metal-oxide-semiconductor high electron mobility transistor (MOSHEMT); post oxidation annealing (POA); ELECTRON-MOBILITY TRANSISTORS; ALGAN/GAN MOS-HEMT; SURFACE PASSIVATION; GATE OXIDE; TEMPERATURE; LEAKAGE; BREAKDOWN; DIODE;

D O I：

10.1109/JEDS.2016.2594293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) performance with post oxidation annealing (POA) process. First, the optimum annealing condition was found to be 400 degrees C for 20 min. The transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy were used for material analysis. The hysteresis capacitance-voltage (C-V) measurement was also used to characterize the amount of traps at the Al2O3/AlGaN interface. It was found that the amount of the traps reduced after POA process. In addition, the performance of the MOSHEMT like gate leakage current, output current, subthreshold swing, off-state breakdown voltage, frequency response, and power characteristics were improved after POA process.

引用

页码：358 / 364

页数：7

共 29 条

[1] Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing [J].

Asubar, Joel T. ;

Kobayashi, Yohei ;

Yoshitsugu, Koji ;

Yatabe, Zenji ;

Tokuda, Hirokuni ;

Horita, Masahiro ;

Uraoka, Yukiharu ;

Hashizume, Tamotsu ;

Kuzuhara, Masaaki .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (08) :2423-2428

[2] ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions [J].

Gregusova, Dagmar ;

Husekova, Kristina ;

Stoklas, Roman ;

Blaho, Michal ;

Jurkovic, Michal ;

Carlin, Jean-Francois ;

Grandjean, Nicolas ;

Kordos, Peter .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)

[3] Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors [J].

Hori, Y. ;

Yatabe, Z. ;

Hashizume, T. .

JOURNAL OF APPLIED PHYSICS, 2013, 114 (24)

[4] Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications [J].

Hsieh, Ting-En ;

Lin, Yueh-Chin ;

Liao, Jen-Ting ;

Lan, Wei-Cheng ;

Chin, Ping-Chieh ;

Chang, Edward Yi .

APPLIED PHYSICS EXPRESS, 2015, 8 (10)

[5] Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs [J].

Hung, Ting-Hsiang ;

Park, Pil Sung ;

Krishnamoorthy, Sriram ;

Nath, Digbijoy N. ;

Rajan, Siddharth .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (03) :312-314

[6] Gate current leakage and breakdown mechanism in unpassivated AlGaN/GaN high electron mobility transistors by post-gate annealing [J].

Kim, H ;

Lee, J ;

Liu, DM ;

Lu, W .

APPLIED PHYSICS LETTERS, 2005, 86 (14) :1-3

[7] Investigations of TiO2-AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition [J].

Lee, Ching-Sung ;

Hsu, Wei-Chou ;

Chou, Bo-Yi ;

Liu, Han-Yin ;

Yang, Cheng-Long ;

Sun, Wen-Ching ;

Wei, Sung-Yen ;

Yu, Sheng-Min ;

Wu, Chang-Luen .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (05) :1460-1466

[8] Role of inert gas additive on dry etch patterning of InGaP in planar inductively coupled BCl3 plasmas [J].

Lee, JW ;

Lim, WT ;

Baek, IK ;

Yoo, SR ;

Jeon, MH ;

Cho, GS ;

Pearton, SJ ;

Abernathy, CR .

SOLID-STATE ELECTRONICS, 2004, 48 (01) :189-192

[9] Suppression of leakage current of Ni/Au Schottky barrier diode fabricated on AlGaN/GaN heterostructure by oxidation [J].

Lee, Seung-Chul ;

Ha, Min-Woo ;

Lim, Ji-Yong ;

Her, Jin-Cherl ;

Seo, Kwang-k Seo ;

Han, Min-Koo .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B) :3398-3400

[10] Enhanced Light Extraction of a High-Power GaN-Based Light-Emitting Diode With a Nanohemispherical Hybrid Backside Reflector [J].

Liou, Jian-Kai ;

Chen, Wei-Cheng ;

Chang, Ching-Hong ;

Chang, Yu-Chih ;

Tsai, Jung-Hui ;

Liu, Wen-Chau .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) :3296-3301

← 1 2 3 →