Low dose radiation effects on a-Si:H TFTs

被引：0

作者：

Picos, R. ^{[1
]}

Papadopoulos, N. P. ^{[2
]}

Lee, Czang-Ho ^{[2
]}

Lopez-Grifol, A. ^{[1
]}

Roca, M. ^{[1
]}

Isern, E. ^{[1
]}

Wong, William S. ^{[2
]}

Garcia-Moreno, E. ^{[1
]}

机构：

[1] Univ Illes Balears, Dept Phys, Elect Engn Grp, Palma De Mallorca, Balearic Island, Spain

[2] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

PROCEEDINGS OF THE 2015 10TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) | 2015年

关键词：

THIN-FILM TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we analyze the effects of X-ray irradiation on a-Si:H TFTs. We have irradiated at low doses, up to 1 krad, and we have measured several transistors, obtaining coherent behaviors. The main effect is a shifting of the threshold voltage, as well as a change in the Ioff current and a change in the mobility. We discuss these effects, and find them to be around three orders of magnitude higher than in an equivalent bulk CMOS technology.

引用

页码：32 / +

页数：4

共 4 条

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[4]

Picos R., 2013, 223 ECS M MAY

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