A 2.8-10.6GHz Low-Power Low-Noise Amplifier for Ultra-Wideband Recivers

被引：0
作者：
Karrari, Hamid [1 ]
Aghdam, Esmaeil Najafi [1 ]
机构：
[1] Sahand Univ Technol, Dept Elect Engn, Tabriz, Iran
来源：
2015 2ND INTERNATIONAL CONFERENCE ON KNOWLEDGE-BASED ENGINEERING AND INNOVATION (KBEI) | 2015年
关键词：
Low-Power; Low-Noise; Ultra-wideband;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In this paper, a 2.8-10.6GHz low-noise amplifier for ultra-wideband applications is presented. The proposed UWB-LNA uses inter-stage technique (current reuse topology with a peaking inductor) to achieve low power consumption. It is designed using TSMC 0.1811 mu m CMOS technology. Simulation results show the LNA achieves flat S21 of 12.32 +/- 1.07 dB, S11 below -7.45 dB, S22 below -8.45 dB, S12 below -47 dB and flat NY of 3.2 +/- 0.2 dB over the 2.8-10.6-GHz band of interest, with only power consumption of 5.74mW.
引用
收藏
页码：908 / 911
页数：4
相关论文
共 50 条
[41]   CMOS dual-wideband low-noise amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for ultra-wideband wireless receiver [J].
Huang, Zhe-Yang ;
Huang, Che-Cheng ;
Chen, Chun-Chieh ;
Hung, Chung-Chih .
2007 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS, VOLS 1 AND 2, 2007, :418-+
[42]   Design of a 2-18GHz Ultra-Wideband MMIC Low Noise Amplifier [J].
Liu, Yuxin ;
Nan, Jingchang .
IEICE ELECTRONICS EXPRESS, 2022, 19 (23)
[43]   An ultra-low-power, low-noise tunable electrocardiogram amplifier [J].
Saeidian, Farida ;
Ashraf, Mohammadreza .
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2020, 48 (11) :1975-1989
[44]   A LOW-POWER WIDEBAND CMOS LOW-NOISE AMPLIFIER USING CURRENT-REUSE TECHNIQUE [J].
Hsu, Meng-Ting ;
Lin, Shih-Kai .
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2009, 51 (09) :2077-2080
[45]   11.81 mW 3.1-10.6 GHz ultra-wideband low-noise amplifier with 2.87 ± 0.19 dB noise figure and 12.52 ± 0.81 dB gain using 0.18 μm CMOS technology [J].
Wu, Chia-Hsing ;
Lin, Yo-Sheng ;
Wang, Chien-Chin .
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2012, 54 (06) :1445-1450
[46]   Compact SiGe HBT low noise amplifiers for 3.1-10.6 GHz ultra-wideband applications [J].
Dederer, J ;
Trasser, A ;
Schumacher, H .
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2006, :391-+
[47]   A low-power CMOS LNA for ultra-wideband wireless receivers [J].
Lee, Yi-Ching ;
Tarng, Jenn-Hwan .
IEICE ELECTRONICS EXPRESS, 2007, 4 (09) :294-299
[48]   Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications [J].
Moschetti, G. ;
Wadefalk, N. ;
Nilsson, P. -A. ;
Abbasi, M. ;
Desplanque, L. ;
Wallart, X. ;
Grahn, J. .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2012, 22 (03) :144-146
[49]   A low-power CMOS modulator for ultra-wideband transmitters [J].
Mazlouman, Shahrzad Jalali ;
Mahanfar, Alireza ;
Mirabbasi, Shahriar .
2007 CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, VOLS 1-3, 2007, :381-384
[50]   A 22.6-to-73.9 GHz Ultra-Wideband Low-Noise Amplifier With Flat In-band Power Gain in 0.13-μm BiCMOS Technology [J].
Zhao, Zenglong ;
Chen, Xianghui ;
Meng, Fanyi ;
Ma, Kaixue .
2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM, IWS 2024, 2024,
12345