MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

被引：3

作者：

Yu, Fangzhou ^{[1
]}

Hong, Wen-Chiang ^{[1
]}

Li, Guangyuan ^{[1
]}

Li, Yuxuan ^{[1
]}

Lu, Ming ^{[2
]}

Lu, Yicheng ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[2] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2021年 / 9卷

关键词：

Zinc; Glass; Nickel; Zinc oxide; Substrates; Logic gates; Thin film transistors; Negative capacitance; transparent electronics; thin-film transistor; subthreshold swing; FERROELECTRIC PROPERTIES;

D O I：

10.1109/JEDS.2021.3108904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg0.03Zn0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni0.02Mg0.15Zn0.83O (NMZO) serves in the gate stack. The Al-doped ZnO (AZO) is employed as the transparent conductive oxide (TCO) for source and drain electrodes. The NC-TTFT on glass shows an average optical transmittance of 91 % in the visible spectrum. The subthreshold swing (SS) value is significantly reduced over the reference transparent thin-film transistor (TTFT) without a ferroelectric layer. The minimum SS value of the NC-TTFT reaches 17 mV/dec. With normally-off operation and high on/off current ratio of 107, this NC-TTFT on glass technology shows promising potential for wearable systems such as augmented reality (AR) smart glasses.

引用

页码：798 / 803

页数：6

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