MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

被引：3

作者：

Yu, Fangzhou ^{[1
]}

Hong, Wen-Chiang ^{[1
]}

Li, Guangyuan ^{[1
]}

Li, Yuxuan ^{[1
]}

Lu, Ming ^{[2
]}

Lu, Yicheng ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[2] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2021年 / 9卷

关键词：

Zinc; Glass; Nickel; Zinc oxide; Substrates; Logic gates; Thin film transistors; Negative capacitance; transparent electronics; thin-film transistor; subthreshold swing; FERROELECTRIC PROPERTIES;

D O I：

10.1109/JEDS.2021.3108904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg0.03Zn0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni0.02Mg0.15Zn0.83O (NMZO) serves in the gate stack. The Al-doped ZnO (AZO) is employed as the transparent conductive oxide (TCO) for source and drain electrodes. The NC-TTFT on glass shows an average optical transmittance of 91 % in the visible spectrum. The subthreshold swing (SS) value is significantly reduced over the reference transparent thin-film transistor (TTFT) without a ferroelectric layer. The minimum SS value of the NC-TTFT reaches 17 mV/dec. With normally-off operation and high on/off current ratio of 107, this NC-TTFT on glass technology shows promising potential for wearable systems such as augmented reality (AR) smart glasses.

引用

页码：798 / 803

页数：6

共 30 条

[1] Demonstration of Wide Bandgap AlGaN/GaN Negative-Capacitance High-Electron-Mobility Transistors (NC-HEMTs) Using Barium Titanate Ferroelectric Gates
Chandrasekar, Hareesh
Razzak, Towhidur
Wang, Caiyu
Reyes, Zeltzin
Majumdar, Kausik
Rajan, Siddharth
[J]. ADVANCED ELECTRONIC MATERIALS, 2020, 6 (08)
[2] Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-κ Gate Dielectric
Cheng, Chun Hu
Chin, Albert
[J]. IEEE ELECTRON DEVICE LETTERS, 2014, 35 (02) : 274 - 276
[3] Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering
Dhanajay
Krupanidhi, S. B.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (08)
[4] Nature of ferroelectricity in nonperovskite semiconductors like ZnO:Li
Glinchuk, M. D.
Kirichenko, E. V.
Stephanovich, V. A.
Zaulychny, B. Y.
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)
[5] Unveiling the double-well energy landscape in a ferroelectric layer
Hoffmann, Michael
Fengler, Franz P. G.
Herzig, Melanie
Mittmann, Terence
Max, Benjamin
Schroeder, Uwe
Negrea, Raluca
Pintilie, Lucian
Slesazeck, Stefan
Mikolajick, Thomas
[J]. NATURE, 2019, 565 (7740) : 464 - +
[6] MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
Hong, Wen-Chiang
Ku, Chieh-Jen
Li, Rui
Abbaslou, Siamak
Reyes, Pavel
Wang, Szu-Ying
Li, Guangyuan
Lu, Ming
Sheng, Kuang
Lu, Yicheng
[J]. SCIENTIFIC REPORTS, 2016, 6
[7] Current Status of Reliability in Extended and Beyond CMOS Devices
Islam, Ahmad Ehteshamul
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (04) : 647 - 666
[8] Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers
Kim, Yu Jin
Yamada, Hiroyuki
Moon, Taehwan
Kwon, Young Jae
An, Cheol Hyun
Kim, Han Joon
Do Kim, Keum
Lee, Young Hwan
Hyun, Seung Dam
Park, Mm Hyuk
Hwang, Cheol Seong
[J]. NANO LETTERS, 2016, 16 (07) : 4375 - 4381
[9] Effective drive current in steep slope FinFET (vs. conventional FinFET)
Ko, Eunah
Shin, Changhwan
[J]. APPLIED PHYSICS LETTERS, 2017, 111 (15)
[10] Improvement of Negative Bias Stress Stability in Mg0.03Zn0.97O Thin-Film Transistors
Ku, Chieh-Jen
Hong, Wen-Chiang
Mohsin, Tanvir
Li, Rui
Duan, Ziqing
Lu, Yicheng
[J]. IEEE ELECTRON DEVICE LETTERS, 2015, 36 (09) : 914 - 916

← 1 2 3 →