Epitaxy of iridium on SrTiO3/Si (001): A promising scalable substrate for diamond heteroepitaxy

被引：28

作者：

Lee, Kee Han ^{[1
]}

Saada, Samuel ^{[1
]}

Amault, Jean-Charles ^{[1
]}

Moalla, Rahma ^{[2
]}

Saint-Girons, Guillaume ^{[2
]}

Bachelet, Romain ^{[2
]}

Bensalah, Hakima ^{[3
]}

Stenger, Ingrid ^{[3
]}

Barjon, Julien ^{[3
]}

Tallaire, Alexandre ^{[4
]}

Achard, Jocelyn ^{[4
]}

机构：

[1] CEA, LIST, Diamond Sensors Lab, F-91191 Gif Sur Yvette, France

[2] Ecole Cent Lyon, CNRS, INL, UMR 5270, 36 Av Guy Collongue, F-69134 Ecully, France

[3] Univ Versailles St Quentin, GEMAC, Versailles, France

[4] Univ Paris 13, Sorbonne Paris Cite, LSPM, CNRS, F-93430 Villetaneuse, France

来源：

关键词：

Diamond film; Heteroepitaxy; Iridium; SrTiO3 (strontium titanate); Integration on silicon; BUFFER LAYERS; HOMOEPITAXIAL DIAMOND; THIN-FILMS; GROWTH; NUCLEATION; DEPOSITION; INTERFACE; SILICON; ROUTE;

D O I：

10.1016/j.diamond.2016.03.018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Iridium epitaxy on SrTiO3/Si (001) was investigated using field emission scanning electron microscopy (FE-SEM), spectroscopic ellipsometry, X-ray diffraction (XRD) and atomic force microscopy (AFM). Thermal stability of SrTiO3 buffer layers (12-40 nm thick) was first investigated by annealing at different temperatures (620 degrees C-920 degrees C) under vacuum to optimize iridium epitaxy conditions. The surface morphology was monitored by FE-SEM and optical constants by spectroscopic ellipsometry. Iridium films were then deposited and their morphology and crystalline quality were evaluated by FE-SEM and XRD. It was found that iridium epitaxy is optimized at 660 degrees C on SrTiO3 films thicker than similar to 30 nm. The polar and azimuthal mosaicities of the iridium films on SrTiO3/Si (001) were 0.3 degrees and 0.1 degrees, respectively. These epitaxial iridium films were further used for diamond heteroepitaxy. The bias enhanced nucleation (BEN) treatment resulted in highly homogeneous and dense diamond domains. Heteroepitaxial diamond films were further grown by microwave plasma enhanced chemical vapor deposition (MPCVD) on 7 x 7 mm(2) Ir/SrTiO3/Si (001) substrates and characterized by XRD. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：67 / 76

页数：10

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