Analysis of beam quality factor for semiconductor lasers

被引：26

作者：

Hatakoshi, G ^{[1
]}

机构：

[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Adv Discrete Semicond Technol Lab, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

来源：

OPTICAL REVIEW | 2003年 / 10卷 / 04期

关键词：

semiconductor laser; beam quality; simulation; M square factor;

D O I：

10.1007/s10043-003-0307-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Output beam characteristics have been analyzed by numerical simulation for semiconductor lasers with various waveguide structures. It was found that the beam quality factors depend significantly on the transverse-mode confining structures.

引用

页码：307 / 314

页数：8

共 10 条

[1]

Hatakoshi G., 1992, International Journal of Optoelectronics, V7, P359

[2]

Hatakoshi G., 1988, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE71, P923

[3] Optical, electrical and thermal analysis for GaN semiconductor lasers [J].

Hatakoshi, G ;

Onomura, M ;

Ishikawa, M .

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2001, 14 (04) :303-323

[4] Analysis of device characteristics for InGaN semiconductor lasers [J].

Hatakoshi, G ;

Onomura, M ;

Saito, S ;

Sasanuma, K ;

Itaya, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (3B) :1780-1785

[5]

NAGASAKA H, 1985, 17 C SOL STAT DEV MA, P37

[6] ASTIGMATISM IN RIDGE-STRIPE INGAAIP LASER-DIODES [J].

NITTA, K ;

ITAYA, K ;

ISHIKAWA, M ;

WATANABE, Y ;

HATAKOSHI, G ;

UEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L2089-L2091

[7] DEFINING THE EFFECTIVE RADIUS OF CURVATURE FOR A NONIDEAL OPTICAL BEAM [J].

SIEGMAN, AE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (05) :1146-1148

[8]

SIEGMAN AE, 1990, P SOC PHOTO-OPT INS, V1224, P2, DOI 10.1117/12.18425

[9]

Taira T., 1998, LASER REV, V26, P723

[10]

Yasui K., 1998, LASER REV, V26, P730

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