Determination of solar cell parameters from its current-voltage and spectral characteristics

被引:40
作者
Tivanov, M
Patryn, A
Drozdov, N
Fedotov, A
Mazanik, A
机构
[1] Belarusian State Univ, Minsk 220050, BELARUS
[2] Tech Univ Koszalin, PL-75453 Koszalin, Poland
关键词
solar cell parameters; p-n junction depth; I-V characteristics; spectral characteristics;
D O I
10.1016/j.solmat.2004.07.033
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
An algorithm for the calculation of solar cell parameters (series and parallel resistance, diode coefficient, reverse current density) calculation from its current-voltage characteristics at fixed illumination intensity is proposed. The possibility of determining the p-n junction depth on the basis of spectral dependencies of diode photocurrent at different values of the applied bias voltage is shown. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:457 / 465
页数:9
相关论文
共 12 条
  • [1] BATAVIN VV, 1985, MEASUREMENT PARAMETE
  • [2] BORDIN N, 1977, SOV HELIOTECH, V1, P17
  • [3] FAHRENBURGH AL, 1983, FUNDAMENTALS SOLAR C
  • [4] GORBAN AP, 1991, SOV OPTOELECTRON SEM, V9, P85
  • [5] Green M. A., 1995, SILICON SOLAR CELLS
  • [6] KAGAN MB, 1968, SOV HELIOTECH, V4, P11
  • [7] KONZEVOI YA, 2000, ZAVODSK LAB, V66, P32
  • [8] SEMICONDUCTOR PROFILING USING AN OPTICAL PROBE
    LILE, DL
    DAVIS, NM
    [J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 699 - &
  • [9] POKLONSKI NA, 2000, LOW DIMENSIONAL SYST, P74
  • [10] SINTON RA, 2000, P 16 EUR PV SOL EN C