Molecular beam epitaxy of p-type cubic GaMnN layers

被引：9
作者：
Foxon, CT [1 ]
Novikov, SV
Zhao, L
Edmonds, KW
Giddings, AD
Wang, KY
Campion, RP
Staddon, CR
Fay, MW
Han, Y
Brown, PD
Sawicki, M
Gallagher, BL
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Nottingham, Sch Mech Mat Mfg Engn & Management, Nottingham NG7 2RD, England
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期
基金：
英国工程与自然科学研究理事会;
关键词：
molecular beam epitaxy; nitrides; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2004.12.112
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Using Mn as a dopant, we developed a new method for reproducible p-type doping of cubic GaN in plasma-assisted molecular beam epitaxy (PA-MBE). Hole densities > 10(18) cm(-3) and bole mobilities > 300 cm(2)/V s have been achieved in our cubic GaMnN films. The Ga:N flux ratio during growth has a strong influence on the electrical properties of the films. PA-MBE growth of cubic GaMnN shows great potential for electrical and spintronic devices. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：685 / 689
页数：5
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