Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100)

被引:22
作者
Hannappel, T
Visbeck, S
Zorn, M
Zettler, JT
Willig, F
机构
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
[2] Tech Univ Berlin, D-10623 Berlin, Germany
关键词
InP(100); RAS; MOCVD; UHV; surface; reconstruction;
D O I
10.1016/S0022-0248(00)00668-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Reflectance anisotropy (RA) spectra of InP(100) surfaces were taken either in the MOCVD environment or, after contamination-free transfer to ultra-high vacuum (UHV), in UHV down to 20 K. They were correlated with photoemission and Auger electron spectroscopy measurements to investigate the transition from the P-rich to the In-rich surface reconstruction. The strongest surface stoichiometry-induced changes were found in the RA-spectra at around 3 eV photon energy, i.e. in the range of the surface-modified bulk E-1 transition. At around 1.8 eV, the main peak of a pronounced surface transition was recorded with equal magnitude and sign for the P-rich and for the In-rich surface reconstruction. Two different specific RA-spectra measured with the highest peaks are postulated here to indicate the ordered P-rich and ordered In-rich surface reconstruction, respectively. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:124 / 128
页数:5
相关论文
共 13 条
  • [1] Molecular control over semiconductor surface electronic properties: Dicarboxylic acids on CdTe, CdSe, GaAs, and InP
    Cohen, R
    Kronik, L
    Shanzer, A
    Cahen, D
    Liu, A
    Rosenwaks, Y
    Lorenz, JK
    Ellis, AB
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1999, 121 (45) : 10545 - 10553
  • [2] Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV
    Hannappel, T
    Visbeck, S
    Knorr, K
    Mahrt, J
    Zorn, M
    Willig, F
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (04): : 427 - 431
  • [3] HANNAPPEL T, 1999, Patent No. 19837851
  • [4] A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy
    Li, L
    Han, BK
    Law, D
    Li, CH
    Fu, Q
    Hicks, RF
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (05) : 683 - 685
  • [5] Example of a compound semiconductor surface that mimics silicon: The InP(001)-(2x1) reconstruction
    Li, L
    Han, BK
    Fu, Q
    Hicks, RF
    [J]. PHYSICAL REVIEW LETTERS, 1999, 82 (09) : 1879 - 1882
  • [6] Photon-induced localization in optically absorbing materials
    Mantese, L
    Bell, KA
    Aspnes, DE
    Rossow, U
    [J]. PHYSICS LETTERS A, 1999, 253 (1-2) : 93 - 97
  • [7] Structural fingerprints in the reflectance anisotropy spectra of InP(001)(2x4) surfaces
    Schmidt, WG
    Briggs, EL
    Bernholc, J
    Bechstedt, F
    [J]. PHYSICAL REVIEW B, 1999, 59 (03): : 2234 - 2239
  • [8] Over 30% efficient InGaP/GaAs tandem solar cells
    Takamoto, T
    Ikeda, E
    Kurita, H
    Ohmori, M
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (03) : 381 - 383
  • [9] Surface termination effect on reflectance spectra of GaAs
    Uwai, K
    Kobayashi, N
    [J]. PHYSICAL REVIEW LETTERS, 1997, 78 (05) : 959 - 962
  • [10] Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE
    Vogt, P
    Hannappel, T
    Visbeck, S
    Knorr, K
    Esser, N
    Richter, W
    [J]. PHYSICAL REVIEW B, 1999, 60 (08) : R5117 - R5120