Dose rate and bias dependency of total dose sensitivity of low dropout voltage regulators

被引：18

作者：

McClure, SS ^{[1
]}

Gorelick, JL ^{[1
]}

Pease, R ^{[1
]}

Johnston, AH ^{[1
]}

机构：

[1] Hughes Space & Commun Co, El Segundo, CA 90245 USA

来源：

2000 IEEE RADIATION EFFECTS DATA WORKSHOP - WORKSHOP RECORD | 2000年

关键词：

D O I：

10.1109/REDW.2000.896278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total dose tests of sis different low dropout voltage regulators show sensitivity to both dose rate and bias during exposure. All devices tested exhibited Enhanced Low Dose Rate Sensitivity (ELDRS) and performed worse for the unbiased irradiation condition. Behavior of critical parameters in different dose rate and bias conditions is compared and the impact to hardness assurance methodology is discussed.

引用

收藏

页码：100 / 105

页数：6

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