Electrical transmission characteristics of differential TSV structures in 3D TSV Packaging

被引：0
作者：
Meng Zhen [1 ]
Yan Yuepeng [1 ]
Wang Chen [2 ]
Zhang Xingcheng [1 ]
Liu Mou [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, 3 Beitucheng West Rd, Beijing 100029, Peoples R China
[2] Minist Environm Protect, Satellite Environm Ctr, Beijing 100094, Peoples R China
来源：
2015 IEEE 17TH ELECTRONICS PACKAGING AND TECHNOLOGY CONFERENCE (EPTC) | 2015年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical characteristics of Through Silicon Via (TSV) have been frequently studied recently, but most studies focused on the single-ended TSV structure. Specially, study about the differential TSV structure is rather limited. In this study. three-dimensional electromagnetic simulation software HFSS was used to analyze the transmission characteristics of the differential signal of the differential TSV structure. Firstly, the differential TSV structure was modeled to analyze the impact on the transmission characteristics of differential signal by the main structural parameters achieved in the mainstream process. Our results indicate that the forward transmission gain increases when the TSV diameter and the thickness of the SiO2 oxide isolation layer increase. However, the forward transmission gain decreases when the TSV height increases. Secondly, the differential TSV structure in the TSV arrangement was modeled. The influence of the pitch of the differential TSV pair on the transmission performance of the differential signal is not a one-way process. Finally, the conical differential TSV structure was modeled to study the influence of non-ideal cylinder shape on the transmission perfonnance of the differential signal. Our results indicate that the forward transmission gain increases when the upper diameter increases and the bottom diameter keeps unchanged.
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