Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence

被引：37
作者：
Garayt, JP
Gérard, JM
Enjalbert, F
Ferlazzo, L
Founta, S
Martinez-Guerrero, E
Rol, F
Araujo, D
Cox, R
Daudin, B
Gayral, B
Dang, LS
Mariette, H
机构：
[1] CNRS, Spectrometrie Phys Lab, Grp Nanophys & Semicond, F-38402 St Martin Dheres, France
[2] CEA, DRFMC, SP2 M, Grp Nanophys & Semicond, F-38054 Grenoble, France
[3] CNRS, LPN, F-91460 Marcoussis, France
[4] Univ Cadiz, Dept Mat Sci, Puerto Real 11510, Spain
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 26卷 / 1-4期
关键词：
quantum dots; micro-cathodolumiescence; cubic nitrides;
D O I：
10.1016/j.physe.2004.08.053
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report single dot spectroscopy of cubic GaN/AlN self-assembled quantum dots. Typical linewidths of the zerophonon line between 2 and 8 meV are observed and interpreted in terms of charge fluctuations around a given quantum dot. The phonon sideband contribution in this emission, even at low temperature, reveals the importance of the acoustic phonon broadening mechanism which controls the exciton dephasing and may impose the real limits to the optical properties of GaN single QDs emission. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：203 / 206
页数：4
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