Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

被引：55

作者：

Chen, Yanxu ^{[1
]}

Xu, Dongliang ^{[1
]}

Xu, Kaikai ^{[1
]}

Zhang, Ning ^{[1
]}

Liu, Siyang ^{[2
]}

Zhao, Jianming ^{[1
]}

Luo, Qian ^{[1
]}

Snyman, Lukas W. ^{[3
]}

Swart, Jacobus W. ^{[4
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[2] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China

[3] Univ South Africa, Dept Elect Engn, ZA-0001 Pretoria, South Africa

[4] State Univ Campinas UNICAMP, Fac Elect & Comp Engn, BR-13083852 Campinas, SP, Brazil

来源：

CHINESE PHYSICS B | 2019年 / 28卷 / 10期

基金：

中国国家自然科学基金;

关键词：

silicon light-emitting diode; reverse bias; electro-optic modulation; SI; ELECTROLUMINESCENCE; CAPACITANCE; DEVICE;

D O I：

10.1088/1674-1056/ab3e44

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Si p(+)n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.

引用

页数：6

共 23 条

[1] THE ELECTRICAL AND DEFECT PROPERTIES OF ERBIUM-IMPLANTED SILICON [J].