Synthesis and characterization of Sb-doped ZnO microspheres by pulsed laser ablation

被引：4
|
作者：
Nagasaki, Fumiaki [1 ]
Shimogaki, Tetsuya [1 ]
Tanaka, Toshinobu [1 ]
Ikebuchi, Tatsuya [1 ]
Ueyama, Takeshi [1 ]
Fujiwara, Yuki [1 ]
Higashihata, Mitsuhiro [1 ]
Nakamura, Daisuke [1 ]
Okada, Tatsuo [1 ]
机构：
[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 08期
关键词：
LASING CHARACTERISTICS; NANORODS; PHOTOLUMINESCENCE; DEPENDENCE; DEPOSITION; GROWTH; SENSOR; FILMS;
D O I：
10.7567/JJAP.55.08RE07
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We succeeded in synthesizing antimony (Sb)-doped zinc oxide (ZnO) microspheres by ablating a sintered ZnO target containing Sb in air. The structural properties of the microspheres were investigated by Raman scattering studies. The Zn-Sb related local vibrational mode (LVM) was detected around 238 cm(-1). Room-temperature photoluminescence (PL) properties of the microspheres were investigated under cw and pulsed laser excitations, and ultraviolet (UV) emission and whispering-gallery-mode (WGM) lasing were observed from the microspheres. Furthermore, a p-n heterojunction was formed between a single Sb-doped ZnO microsphere and an n-Al-doped ZnO thin film, and a good rectifying property with a turn-on voltage of approximately 1.8V was observed in the current-voltage (I-V) characteristics across the junction. (C) 2016 The Japan Society of Applied Physics
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页数：4
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