Synthesis and characterization of Sb-doped ZnO microspheres by pulsed laser ablation

被引：4

作者：

Nagasaki, Fumiaki ^{[1
]}

Shimogaki, Tetsuya ^{[1
]}

Tanaka, Toshinobu ^{[1
]}

Ikebuchi, Tatsuya ^{[1
]}

Ueyama, Takeshi ^{[1
]}

Fujiwara, Yuki ^{[1
]}

Higashihata, Mitsuhiro ^{[1
]}

Nakamura, Daisuke ^{[1
]}

Okada, Tatsuo ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 08期

关键词：

LASING CHARACTERISTICS; NANORODS; PHOTOLUMINESCENCE; DEPENDENCE; DEPOSITION; GROWTH; SENSOR; FILMS;

D O I：

10.7567/JJAP.55.08RE07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We succeeded in synthesizing antimony (Sb)-doped zinc oxide (ZnO) microspheres by ablating a sintered ZnO target containing Sb in air. The structural properties of the microspheres were investigated by Raman scattering studies. The Zn-Sb related local vibrational mode (LVM) was detected around 238 cm(-1). Room-temperature photoluminescence (PL) properties of the microspheres were investigated under cw and pulsed laser excitations, and ultraviolet (UV) emission and whispering-gallery-mode (WGM) lasing were observed from the microspheres. Furthermore, a p-n heterojunction was formed between a single Sb-doped ZnO microsphere and an n-Al-doped ZnO thin film, and a good rectifying property with a turn-on voltage of approximately 1.8V was observed in the current-voltage (I-V) characteristics across the junction. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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