Unconventional electronic structure evolution with hole doping in Bi2Sr2CaCu2O8+delta: Angle-resolved photoemission results

被引：611

作者：

Marshall, DS

Dessau, DS

Loeser, AG

Park, CH

Matsuura, AY

Eckstein, JN

Bozovic, I

Fournier, P

Kapitulnik, A

Spicer, WE

Shen, ZX

机构：

[1] STANFORD UNIV,STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94305

[2] VARIAN ASSOCIATES INC,GINZTON RES CTR,PALO ALTO,CA 94304

[3] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

[4] UNIV COLORADO,DEPT PHYS,BOULDER,CO 80309

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.76.4841

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report angle-resolved photoemission results on Bi2Sr2Ca1-xDyxCu2O8+delta and oxygen depleted Bi2Sr2CaCu2O8+delta investigating the electronic structure changes above T-c in materials with hole doping levels ranging from insulating to slightly overdoped. Near optimal hole doping, the Fermi surface is large and consistent with band calculations. In underdoped samples with T-c of 60-70 K, portions of this Fermi surface are not seen. This change is related to the opening of an energy gap near (pi, 0) above T-c.

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页码：4841 / 4844

页数：4

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