Crystallization of optically thick films of CoxFe80-xB20: Evolution of optical, magneto-optical, and structural properties

被引:11
作者
Sharma, Apoorva [1 ]
Hoffmann, Maria A. [2 ]
Matthes, Patrick [3 ]
Hellwig, Olav [1 ,4 ]
Kowol, Cornelia [2 ]
Schulz, Stefan E. [2 ,3 ]
Zahn, Dietrich R. T. [1 ]
Salvan, Georgeta [1 ]
机构
[1] Tech Univ Chemnitz, Inst Phys, D-09126 Chemnitz, Germany
[2] Tech Univ Chemnitz, Ctr Microtechnol, D-09126 Chemnitz, Germany
[3] Fraunhofer Inst Elect Nanosyst, D-09126 Chemnitz, Germany
[4] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany
关键词
SPECTROSCOPIC ELLIPSOMETRY; ELECTRONIC-STRUCTURE; MAGNETIC-PROPERTIES; TUNNEL-JUNCTIONS; METALLIC-FILMS; FE; SILICON; CO; CONSTANTS;
D O I
10.1103/PhysRevB.101.054438
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CoFeB alloys are highly relevant materials for spintronic applications. In this work, the crystallization of CoFeB alloys triggered by thermal annealing was investigated by x-ray diffraction techniques and scanning electron microscopy, as well as spectroscopic ellipsometry and magneto-optical Kerr effect spectroscopy for annealing temperatures ranging from 300 to 600 degrees C. The transformation of similar to 100-nm-thick CoxFe(80-x)B20 films from amorphous to polycrystalline was revealed by the sharpening of spectral features observed in optical and magneto-optical dielectric functions spectra. The influence of B on the dielectric function was assessed both experimentally and by optical modeling. By analyzing the Drude component of the optical dielectric function, a consistent trend between the charge-carrier scattering time/resistivity and the annealing temperature was observed, in agreement with the electrical investigations by means of the four-point-probe method.
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页数:10
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