A Sub-1G CMOS-MEMS Accelerometer

被引：0

作者：

Yamane, Daisuke ^{[1
,2
]}

Konishi, Toshifumi ^{[3
]}

Takayasu, Motohiro ^{[1
,2
]}

Ito, Hiroyuki ^{[1
,2
]}

Dosho, Shiro ^{[1
,2
]}

Ishihara, Noboru ^{[1
,2
]}

Toshiyoshi, Hiroshi ^{[2
,4
]}

Masu, Kazuya ^{[1
,2
]}

Machida, Katsuyuki ^{[1
,2
,3
]}

机构：

[1] Tokyo Inst Technol, Yokohama, Kanagawa, Japan

[2] JST, CREST, Saitama, Japan

[3] NTT Adv Technol Corp, Kawasaki, Kanagawa, Japan

[4] Univ Tokyo, Tokyo, Japan

来源：

2015 IEEE SENSORS | 2015年

关键词：

CMOS-MEMS; MEMS acceleroemter; sub-1G; CMOS LSI; multi-layered metal; post-CMOS electroplating;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report experimental evaluation results of a CMOS (complementary-metal-oxide semiconductor) MEMS (microelectromechanical systems) accelerometer for sensing sub-1G (1G = 9.8 m/s(2)) acceleration. The sub-1G MEMS sensor has been successfully implemented on a 180-nm CMOS LSI (large scale integrated circuits) for the first time. For the MEMS fabrication, we utilized multi-layered metal technology for the post-CMOS process. The accelerometer was developed within the footprint of 4 x 4 mm(2). The sensitivity was measured to be 0.604 (V/G) at the input of acceleration from -1 G to +1 G. The experimentally obtained results were consistent with the design values.

引用

页码：513 / 516

页数：4

共 6 条

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[2]

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