Oxygen Defects in Phosphorene

被引:531
作者
Ziletti, A. [1 ]
Carvalho, A. [2 ,3 ]
Campbell, D. K. [4 ]
Coker, D. F. [1 ,5 ]
Neto, A. H. Castro [2 ,3 ,4 ]
机构
[1] Boston Univ, Dept Chem, Boston, MA 02215 USA
[2] Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117546, Singapore
[3] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore
[4] Boston Univ, Dept Phys, Boston, MA 02215 USA
[5] Univ Freiburg, Freiburg Inst Adv Studies FRIAS, D-79104 Freiburg, Germany
基金
美国国家科学基金会; 新加坡国家研究基金会;
关键词
BLACK PHOSPHORUS; SURFACE; SEMICONDUCTOR; TRANSPORT;
D O I
10.1103/PhysRevLett.114.046801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Surface reactions with oxygen are a fundamental cause of the degradation of phosphorene. Using first-principles calculations, we show that for each oxygen atom adsorbed onto phosphorene there is an energy release of about 2 eV. Although the most stable oxygen adsorbed forms are electrically inactive and lead only to minor distortions of the lattice, there are low energy metastable forms which introduce deep donor and/or acceptor levels in the gap. We also propose a mechanism for phosphorene oxidation involving reactive dangling oxygen atoms and we suggest that dangling oxygen atoms increase the hydrophilicity of phosphorene.
引用
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页数:5
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