Investigation of Ge/Si quantum dot structures using the methods of admittance spectroscopy

被引：0

作者：

Satdarov, Vadim G. ^{[1
]}

Voitsekhovskii, Alexander V. ^{[1
]}

Kokhanenko, Andrey P. ^{[1
]}

Lozovoy, Kirill A. ^{[1
]}

机构：

[1] Natl Res Tomsk State Univ, Dept Quantum Elect & Photon, Tomsk 634050, Russia

来源：

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2015年 / 12卷 / 3-4期

关键词：

admittance spectroscopy; germanium; silicon; quantum dot; multi-layer structure; solar cell; molecular beam epitaxy; SOLAR-CELLS; GE ISLANDS; NANOSTRUCTURES; EFFICIENCY; SI; GERMANIUM;

D O I：

10.1504/IJNT.2015.067213

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper the properties of multilayer p-i-n-structures based on Si with Ge quantum dots fabricated by molecular beam epitaxy were investigated using the method of admittance spectroscopy at temperatures from 10 K to 300 K. The results of experimental research for two types of structures are presented. The activation energies of the emission process from localised states are calculated.

引用

页码：285 / 296

页数：12

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