Growth and thermal evolution of submonolayer Pt films on Ru(0001) studied by STM

被引:36
作者
Käsberger, U [1 ]
Jakob, P [1 ]
机构
[1] Tech Univ Munich, Dept Phys E20, D-85747 Garching, Germany
关键词
growth; nucleation; scanning tunneling microscopy; ruthenium; platinum; epitaxy; low index single crystal surfaces; metal-metal interfaces;
D O I
10.1016/S0039-6028(03)00776-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The growth of submonolayer Pt on Ru(0 0 0 1) has been studied with scanning tunneling microscopy. We focus on the island evolution depending on Pt coverage theta(Pt), growth temperature T-G and post-growth annealing temperature T-A. Dendritic trigonal Pt islands with atomically rough borders are observed at room temperature and moderate deposition rates of about 5 x 10(-4) ML/s. Two types of orientation, rotated by 180degrees and strongly influenced by minute amounts of oxygen are observed which is ascribed to nucleation starting at either hcp or fcc hollow sites. The preference for fcc sites changes to hcp in the presence of about one percent of oxygen. At lower growth temperatures Pt islands show a more fractal shape. Generally, atomically rough island borders smooth down at elevated growth temperatures higher than 300 K, or equivalent annealing temperatures. Dendritic Pt islands, for example, transform into compact, almost hexagonal islands, indicating similar step energies of A- and B-type of steps. Depending on the Pt coverage the thermal evolution differs somewhat: While regular islands on Ru(0 0 0 1) are formed at low coverages, vacancy islands are observed close to completion of the Pt layer. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:76 / 88
页数:13
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