Negative differential resistance behaviour in N-doped crossed graphene nanoribbons

被引：12

作者：

Chen Ling-Na ^{[1
,2
]}

Ma Song-Shan ^{[1
]}

Ouyang Fang-Ping ^{[1
]}

Wu Xiao-Zan ^{[1
]}

Xiao Jin ^{[1
]}

Xu Hui ^{[1
]}

机构：

[1] Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Hunan, Peoples R China

[2] Univ S China, Sch Comp Sci & Technol, Hengyang 421001, Peoples R China

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 09期

基金：

中国国家自然科学基金;

关键词：

transport properties; negative differential resistance; first-principles; crossed graphene nanoribbons;

D O I：

10.1088/1674-1056/19/9/097301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By using first-principles calculations and nonequilibrium Green's function technique, we study elastic transport properties of crossed graphene nanoribbons. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance (NDR) behaviour can be observed in a certain bias region, when crossed graphene nanoribbons are doped with nitrogen atoms at the shoulder, but it cannot be observed for pristine crossed graphene nanoribbons at low biases. A mechanism for the negative differential resistance behaviour is suggested.

引用

页数：5

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