Negative differential resistance behaviour in N-doped crossed graphene nanoribbons

被引：12
作者：
Chen Ling-Na [1 ,2 ]
Ma Song-Shan [1 ]
Ouyang Fang-Ping [1 ]
Wu Xiao-Zan [1 ]
Xiao Jin [1 ]
Xu Hui [1 ]
机构：
[1] Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Hunan, Peoples R China
[2] Univ S China, Sch Comp Sci & Technol, Hengyang 421001, Peoples R China
来源：
CHINESE PHYSICS B | 2010年 / 19卷 / 09期
基金：
中国国家自然科学基金;
关键词：
transport properties; negative differential resistance; first-principles; crossed graphene nanoribbons;
D O I：
10.1088/1674-1056/19/9/097301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
By using first-principles calculations and nonequilibrium Green's function technique, we study elastic transport properties of crossed graphene nanoribbons. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance (NDR) behaviour can be observed in a certain bias region, when crossed graphene nanoribbons are doped with nitrogen atoms at the shoulder, but it cannot be observed for pristine crossed graphene nanoribbons at low biases. A mechanism for the negative differential resistance behaviour is suggested.
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页数：5
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共 29 条
  • [1] Electronic confinement and coherence in patterned epitaxial graphene
    Berger, Claire
    Song, Zhimin
    Li, Xuebin
    Wu, Xiaosong
    Brown, Nate
    Naud, Cecile
    Mayou, Didier
    Li, Tianbo
    Hass, Joanna
    Marchenkov, Atexei N.
    Conrad, Edward H.
    First, Phillip N.
    de Heer, Wait A.
    [J]. SCIENCE, 2006, 312 (5777) : 1191 - 1196
  • [2] Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons
    Biel, Blanca
    Blase, X.
    Triozon, Francois
    Roche, Stephan
    [J]. PHYSICAL REVIEW LETTERS, 2009, 102 (09)
  • [3] Large on-off ratios and negative differential resistance in a molecular electronic device
    Chen, J
    Reed, MA
    Rawlett, AM
    Tour, JM
    [J]. SCIENCE, 1999, 286 (5444) : 1550 - 1552
  • [4] Negative differential resistance and multilevel memory effects in organic devices
    Chen, Jiangshan
    Xu, Liling
    Lin, Jian
    Geng, Yanhou
    Wang, Lixiang
    Ma, Dongge
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) : 1121 - 1124
  • [5] Mechanism for negative differential resistance in molecular electronic devices: Local orbital symmetry matching
    Chen, Lan
    Hu, Zhenpeng
    Zhao, Aidi
    Wang, Bing
    Luo, Yi
    Yang, Jinlong
    Hou, J. G.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 99 (14)
  • [6] Negative differential resistance in phenylene ethynylene oligomers
    Cornil, J
    Karzazi, Y
    Brédas, JL
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (14) : 3516 - 3517
  • [7] Electrical behavior of memory devices based on fluorene-containing organic thin films
    Dimitrakis, Panagiotis
    Normand, Pascal
    Tsoukalas, Dimitris
    Pearson, Christopher
    Ahn, Jin H.
    Mabrook, Mohammed F.
    Zeze, Dagou A.
    Petty, Michael C.
    Kamtekar, Kiran T.
    Wang, Changsheng
    Bryce, Martin R.
    Green, Mark
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (04)
  • [8] Intrinsic Half-Metallicity in Modified Graphene Nanoribbons
    Dutta, Sudipta
    Manna, Arun K.
    Pati, Swapan K.
    [J]. PHYSICAL REVIEW LETTERS, 2009, 102 (09)
  • [9] Theoretical investigation of the negative differential resistance in squashed C60 molecular device
    Fan, Zhi-Qiang
    Chen, Ke-Qiu
    Wan, Qing
    Zou, B. S.
    Duan, Wenhui
    Shuai, Z.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (26)
  • [10] Thermoelectric-transport in metal/graphene/metal hetero-structure
    Hu Hao
    Cai Jin-Ming
    Zhang Chen-Dong
    Gao Min
    Pan Yi
    Du Shi-Xuan
    Sun Qing-Feng
    Niu Qian
    Xie Xin-Cheng
    Gao Hong-Jun
    [J]. CHINESE PHYSICS B, 2010, 19 (03)
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