Theoretical Study on the Transport Through a Quantum Dots Array with a Side Quantum Dot

被引：0

作者：

Yin, Haitao ^{[1
]}

Liu, Xiaojie ^{[1
]}

Wan, Weilong ^{[1
]}

Yao, Chengbao ^{[1
]}

Bai, Lina ^{[1
]}

Li, Hua ^{[1
]}

Yin, Yongqi ^{[1
]}

机构：

[1] Harbin Normal Univ, Heilongjiang Key Lab Low Dimens Syst & Mesoscop P, Sch Phys & Elect Engn, Harbin, Heilongjiang Pr, Peoples R China

来源：

MECHANICAL PROPERTIES OF MATERIALS AND INFORMATION TECHNOLOGY | 2012年 / 340卷

关键词：

Quantum dot; Electronic transport; Quantum interference;

D O I：

10.4028/www.scientific.net/AMR.340.331

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

We studied transport properties through a noninteracting quantum dots array with a side quantum dot employing the equation of motion method and Green function technique. The linear conductance has been calculated numerically. It is shown that an antiresonance always pinned at the energy level of side quantum dot. The conductance develops Fano line shape when the side quantum dot level is not aligned with that of the quantum dots in the array due to quantum interference through different channels.

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页码：331 / 336

页数：6

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