Self-trapped exciton state in Si nanocrystals revealed by induced absorption

被引：24

作者：

de Boer, W. D. A. M. ^{[1
]}

Timmerman, D. ^{[1
]}

Gregorkiewicz, T. ^{[1
]}

Zhang, H. ^{[2
]}

Buma, W. J. ^{[2
]}

Poddubny, A. N. ^{[3
]}

Prokofiev, A. A. ^{[3
]}

Yassievich, I. N. ^{[3
]}

机构：

[1] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1098 XH Amsterdam, Netherlands

[2] Univ Amsterdam, Vant Hoff Inst Mol Sci, NL-1098 XH Amsterdam, Netherlands

[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 16期

关键词：

SILICON NANOCRYSTALS; LUMINESCENCE; CENTERS; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTORS;

D O I：

10.1103/PhysRevB.85.161409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report results of time-resolved induced absorption (IA) spectroscopy on Si nanocrystals (Si NCs) embedded in a SiO2 matrix. In line with theoretical modeling, the IA amplitude decreases with probing photon energy, however only until a certain threshold value. For larger photon energies, an increase of IA is observed. This unexpected behavior is interpreted in terms of the self-trapped exciton state whose formation in Si NCs was put forward some time ago based on theoretical considerations. Here, we present a direct experimental confirmation of this supposition.

引用

页数：5

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