Self-trapped exciton state in Si nanocrystals revealed by induced absorption

被引：24

作者：

de Boer, W. D. A. M. ^{[1
]}

Timmerman, D. ^{[1
]}

Gregorkiewicz, T. ^{[1
]}

Zhang, H. ^{[2
]}

Buma, W. J. ^{[2
]}

Poddubny, A. N. ^{[3
]}

Prokofiev, A. A. ^{[3
]}

Yassievich, I. N. ^{[3
]}

机构：

[1] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1098 XH Amsterdam, Netherlands

[2] Univ Amsterdam, Vant Hoff Inst Mol Sci, NL-1098 XH Amsterdam, Netherlands

[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 16期

关键词：

SILICON NANOCRYSTALS; LUMINESCENCE; CENTERS; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTORS;

D O I：

10.1103/PhysRevB.85.161409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report results of time-resolved induced absorption (IA) spectroscopy on Si nanocrystals (Si NCs) embedded in a SiO2 matrix. In line with theoretical modeling, the IA amplitude decreases with probing photon energy, however only until a certain threshold value. For larger photon energies, an increase of IA is observed. This unexpected behavior is interpreted in terms of the self-trapped exciton state whose formation in Si NCs was put forward some time ago based on theoretical considerations. Here, we present a direct experimental confirmation of this supposition.

引用

页数：5

共 39 条

[1]

Abakumov V. N., 1991, Nonradiative Recombination in Semiconductors

[2] Nature of luminescent surface states of semiconductor nanocrystallites [J].

Allan, G ;

Delerue, C ;

Lannoo, M .

PHYSICAL REVIEW LETTERS, 1996, 76 (16) :2961-2964

[3] Multiple exciton generation in colloidal silicon nanocrystals [J].

Beard, Matthew C. ;

Knutsen, Kelly P. ;

Yu, Pingrong ;

Luther, Joseph M. ;

Song, Qing ;

Metzger, Wyatt K. ;

Ellingson, Randy J. ;

Nozik, Arthur J. .

NANO LETTERS, 2007, 7 (08) :2506-2512

[4] ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF HEAT-TREATMENT CENTERS IN N-TYPE SILICON [J].

BEKMAN, HHPT ;

GREGORKIEWICZ, T ;

VANWEZEP, DA ;

AMMERLAAN, CAJ .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4404-4405

[5] Interband, intraband, and excited-state direct photon absorption of silicon and germanium nanocrystals embedded in a wide band-gap lattice [J].

Bulutay, C. .

PHYSICAL REVIEW B, 2007, 76 (20)

[6] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[7]

de Boer W., 2012, SPIE NEWSROOM, DOI [10.1117/2.1201202.004136, DOI 10.1117/2.1201202.004136]

[8] Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption [J].

de Boer, W. D. A. M. ;

Trinh, M. T. ;

Timmerman, D. ;

Schins, J. M. ;

Siebbeles, L. D. A. ;

Gregorkiewicz, T. .

APPLIED PHYSICS LETTERS, 2011, 99 (05)

[9]

de Boer WDAM, 2010, NAT NANOTECHNOL, V5, P878, DOI [10.1038/nnano.2010.236, 10.1038/NNANO.2010.236]

[10]

DEBOER W, UNPUB

← 1 2 3 4 →