Tribological behavior of radio-frequency sputtering WS2 thin films with vacuum annealing

被引：12

作者：

Du, G. Y. ^{[1
]}

Ba, D. C. ^{[1
]}

Tan, Z. ^{[2
]}

Liu, K. ^{[1
]}

机构：

[1] Northeastern Univ, Vacuum & Fluid Engn Res Ctr, Shenyang 110004, Peoples R China

[2] ShenYang Radio & TV Univ, Shenyang 110004, Peoples R China

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 02期

关键词：

Tungsten disulfide film; Vacuum annealing; Structure; Tribological performance; SOLID-STATE REACTION; MOS2; DEPOSITION; CONSTITUENTS; LUBRICANTS; FRICTION; COATINGS; CELL;

D O I：

10.1016/j.tsf.2011.04.195

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of tungsten disulfide (WS2) were deposited on 3Cr13 martensitic stain less steel substrate by radio-frequency (RF) sputtering. The as-deposited films were annealed at 473, 673 and 873 K respectively for 2 h in 5x10(-4) Pa vacuum. Composition of the films was inspected by energy dispersive spectroscopy. Surface morphology and structure properties were studied by scanning electron microscopy and X-ray diffraction techniques. Tribological behavior was also examined using tribometer. At 473 K, the films exhibited low crystallization structure and no significant improvement in the tribological performance. At 673 K, the tribological performance was improved and a transition from non-crystalline to hexagonal structure took in place. When the annealing temperature rose up to 873 K, the films cracked and fell off from the substrate. The results suggested that with suitable technical parameters vacuum annealing could promote crystallization and improve tribological performance of RF sputtering WS2 films. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：849 / 852

页数：4

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