Effect of active sites in pulsed laser deposited bimetallic NiMoS2 thin films for solar energy conversion

被引:7
作者
Arulraj, A. [1 ]
Subramanian, B. [2 ]
Ramesh, M. [2 ]
Senguttuvan, G. [1 ]
机构
[1] Anna Univ, Univ Coll Engn, Dept Phys, BIT Campus, Tiruchirappalli, Tamil Nadu, India
[2] Cent Electrochem Res Inst, Funct Mat Div, Karaikkudi, Tamil Nadu, India
关键词
Thin films; Solar energy materials; NiMoS2; Pulsed laser deposition; Counter electrode; DSSCs;
D O I
10.1016/j.matlet.2019.01.068
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Bimetallic nickel molybdenum disulfide (NiMoS2) thin films were fabricated on fluorine doped tin oxide (FTO) substrates using pulsed laser deposition and employed as counter electrode in solar energy conversion devices. Krypton fluoride (KrF) excimer laser was used as source for fabricating NiMoS2 thin films. The energetic active sites of the NiMoS2 were tuned under in-situ temperature conditions (room temperature and 600 degrees C). The quantitative and qualitative analyses of the fabricated materials were examined using various characterization techniques. Active modes of Raman vibrations in correspondence with NiMoS2 are observed from Raman spectra and the presence of 2H pristine (MoS2) and hexagonal (Ni) phase are determined from XRD analysis. The surface morphology of fabricated NiMoS2 thin films was dynamically visualized from FESEM analysis. The JV characteristic performance of the pulsed laser deposited NiMoS2 counter electrode analyzed using solar simulator at illumination of 100 mW/cm(2) . NiMoS2 employed DSSCs exhibits a photo-conversion efficiency of similar to 4.80%. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码:132 / 135
页数:4
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