Structural and magnetic properties of diluted magnetic semiconductor GaGdN nanorods

被引：3
作者：
Tambo, H. [1 ]
Hasegawa, S. [1 ]
Higashi, K. [1 ]
Kakimi, R. [1 ]
Tawil, S. N. M. [1 ]
Zhou, Y. K. [1 ]
Emura, S. [1 ]
Asahi, H. [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期
关键词：
GaGdN; nanorods; molecular-beam epitaxy; magnetic semiconductor; MOLECULAR-BEAM EPITAXY; CRYSTAL-GROWTH; FERROMAGNETISM;
D O I：
10.1002/pssc.201000486
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Diluted magnetic semiconductor GaGdN nanorods were grown on Si (001) substrates with native silicon oxides by molecular-beam epitaxy with radio frequency nitrogen plasma. The Gd cell temperature dependences of their structural and magnetic properties were systematically studied. It was found that higher Gd fluxes suppress the growth of nanorods along the c-direction and form GdN secondary phase. Magnetic measurement also revealed that nanorods of high content Gd showed small magnetization, indicating that GdN come to form and therefore the amount of Gd atoms substituted for Ga sites in GaGdN decreases. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：494 / 496
页数：3
相关论文
共 50 条
  • [21] Diluted magnetic semiconductor properties in TM doped ZnO nanoparticles
    Jabbar, Iqra
    Zaman, Yasir
    Althubeiti, Khaled
    Al Otaibi, Sattam
    Ishaque, M. Zahid
    Rahman, Nasir
    Sohail, Mohammad
    Khan, Alamzeb
    Ullah, Asad
    Del Rosso, Tommaso
    Zaman, Quaid
    Khan, Rajwali
    Khan, Aurangzeb
    RSC ADVANCES, 2022, 12 (21) : 13456 - 13463
  • [22] Pressure effect on the anomalies of the electric and magnetic properties of diluted magnetic semiconductor CdGeAs2 doped with Mn
    Arslanov, Rasul
    Mollaev, Akhmedbek
    Kamilov, Ibragimkhan
    Arslanov, Temirlan
    Zalibekov, Ullubiy
    Novotortsev, Vladimir
    Marenkin, Sergey
    Troyanchuk, Igor
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2013, 250 (04): : 736 - 740
  • [23] Phase Transition of Diluted Magnetic Semiconductor
    Li, M. K.
    Lee, S. J.
    Yuldashev, S. U.
    Ihm, G.
    Kang, T. W.
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [24] Magnetic and structural properties of Cr-based diluted magnetic semiconductors and alloys
    Alsaad, A.
    PHYSICA B-CONDENSED MATTER, 2010, 405 (03) : 951 - 954
  • [25] Magnetic characteristics of epitaxial Ge(Mn,Fe) diluted films -: a new room temperature magnetic semiconductor?
    Braak, H
    Gareev, RR
    Bürgler, DE
    Schreiber, R
    Grünberg, P
    Schneider, CM
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2005, 286 : 46 - 50
  • [26] Magnetic Properties of GaGdN Studied by SX-MCD and XAFS
    Takahashi, M.
    Zhou, Yi-Kai
    Nakamura, T.
    Emura, S.
    Hasegawa, S.
    Asahi, H.
    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2010, 23 (01) : 107 - 109
  • [27] Diluted magnetic semiconductor at finite temperature
    Sun, SJ
    Lin, HH
    PHYSICS LETTERS A, 2004, 327 (01) : 73 - 77
  • [28] Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods
    Tambo, H.
    Hasegawa, S.
    Kameoka, H.
    Zhou, Y. K.
    Emura, S.
    Asahi, H.
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 323 - 325
  • [29] InMnN: a nitride-based diluted magnetic semiconductor
    Chen, PP
    Makino, H
    Yao, T
    SOLID STATE COMMUNICATIONS, 2004, 130 (1-2) : 25 - 29
  • [30] Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures
    Shen, A
    Matsukura, F
    Sugawara, Y
    Kuroiwa, T
    Ohno, H
    Oiwa, A
    Endo, A
    Katsumoto, S
    Iye, Y
    APPLIED SURFACE SCIENCE, 1997, 113 : 183 - 188
12345