Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE

被引：14

作者：

Keiper, D ^{[1
]}

Westphalen, R ^{[1
]}

Landgren, G ^{[1
]}

机构：

[1] Royal Inst Technol, KTH, Dept Elect, Electrum 229, S-16490 Kista, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 197卷 / 1-2期

关键词：

InGaAs : C; GaInAs : C; metalorganic-VPE; carbon; nitrogen; CBr4;

D O I：

10.1016/S0022-0248(98)00903-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The p-type carrier concentration of MOVPE grown carbon doped InGaAs/InP and GaAs is investigated using H-2 and N-2 as carrier gas. Employing N-2 instead of H-2 halves the growth rate and diminishes the TMGa decomposition in the kinetically limited growth regime. The p-type carrier concentration of GaAs can be doubled by shifting to N-2. In N-2 ambient the maximal p-carrier concentration in InGaAs can be more than doubled compared to the maximal p-doping levels in H-2 Using N-2 as carrier gas it is possible to achieve p-type carrier concentrations in InGaAs/InP up to 1 x 10(19) cm(-3) at temperatures as high as 550 degrees C. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：25 / 30

页数：6

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