Effect of the line tension at the vapor-liquid-solid boundary on the growth of silicon nanocrystals

被引:8
作者
Nebol'sin, V. A. [1 ]
Dunaev, A. I. [1 ]
Zavalishin, M. A. [1 ]
机构
[1] Voronezh State Tech Univ, Voronezh 394026, Russia
关键词
D O I
10.1134/S0020168508060010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We examine the thermodynamic aspects of the effect of the line tension at a bent vapor-liquid-solid boundary on quasi-one-dimensional growth of silicon nanowires. Experimental data demonstrate that there is a limiting size of solvent nanodrops below which they cannot exist in equilibrium and that there is a limiting nanowire diameter starting at which the increase in line tension with decreasing diameter prevents nanocrystal growth at a given supersaturation.
引用
收藏
页码:559 / 562
页数:4
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