Interface Engineering for Controlling Device Properties of Organic Antiambipolar Transistors

被引：38

作者：

Kobashi, Kazuyoshi ^{[1
,2
]}

Hayakawa, Ryoma ^{[1
]}

Chikyow, Toyohiro ^{[1
]}

Wakayama, Yutaka ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[2] Kyushu Univ, Dept Chem & Biochem, Fac Engn, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 03期

关键词：

antiambipolar transistor; pn heterojunction; negative differential resistance; carrier injection; high-k dielectric; organic field-effect transistor; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; P-N HETEROJUNCTIONS; LAYER; PERFORMANCE; PENTACENE; MONOLAYER; CONTACT; HYBRID; DIODES;

D O I：

10.1021/acsami.7b14652

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The main purpose of this study is to establish a guideline for controlling the device properties of organic antiambipolar transistors. Our key strategy is to use interface engineering to promote carrier injection at channel/electrode interfaces and carrier accumulation at a channel/dielectric interface. The effective use of carrier injection interlayers and an insulator layer with a high dielectric constant (high-k) enabled the fine tuning of device parameters and, in particular, the onset (V-on) and offset (V-off) voltages. A well-matched combination of the interlayers and a high-k dielectric layer achieved a low peak voltage (0.25 V) and a narrow on-state bias range (2.2 V), indicating that organic antiambipolar transistors have high potential as negative differential resistance devices for multivalued logic circuits.

引用

页码：2762 / 2767

页数：6

共 33 条

[1] Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2 [J].