2:1 Multiplexer Based Design for Ternary Logic Circuits

被引:0
作者
Vudadha, Chetan [1 ]
Katragadda, Sowmya [1 ]
Phaneendra, Sai P. [1 ]
机构
[1] Birla Inst Technol & Sci Pilani, Hyderabad 500078, Andhra Pradesh, India
来源
2013 IEEE ASIA PACIFIC CONFERENCE ON POSTGRADUATE RESEARCH IN MICROELECTRONICS & ELECTRONICS (PRIMEASIA) | 2013年
关键词
Multi Valued Logic (MVL); CNFET; CNTFET; Ternary logic; Ternary Decoder; Ternary Multiplexer; FIELD-EFFECT TRANSISTORS; COMPACT SPICE MODEL; INCLUDING NONIDEALITIES; CARBON NANOTUBES; DEVICE MODEL;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a design methodology using multiplexers to implement any ternary logic function with carbon nanotube field effect transistors ( CNFETs). Ternary logic is one of the promising alternatives to conventional binary logic, since it is possible to achieve simplicity and low power dissipation due to the reduced circuit such as interconnects and chip area. The paper presents a design methodology which uses the combination of Binary 2:1 multiplexers and Ternary multiplexers, to implement Ternary logic circuits. A 1- bit half adder circuits is implemented using the proposed methodology. The proposed implementations are compared with the existing designs for parameters like delay, power etc. Two kinds of 1-bit half adders i.e., delay optimized and power optimized half adders have been designed. Simulation results indicate that the proposed multiplexer based 1-bit half adder design results in 58% average power reduction and 64% power delay product reduction when compared to the existing multiplexer based design.
引用
收藏
页码:46 / 51
页数:6
相关论文
共 16 条
[1]  
[Anonymous], P IEEE INT MIDW S CI
[2]   Carbon nanotubes for high-performance electronics - Progress and prospect [J].
Appenzeller, J. .
PROCEEDINGS OF THE IEEE, 2008, 96 (02) :201-211
[3]   LOW POWER DISSIPATION MOS TERNARY LOGIC FAMILY. [J].
Balla, Prabhakara C. ;
Antoniou, Andreas .
IEEE Journal of Solid-State Circuits, 1984, SC-19 (05) :739-749
[4]   A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application - Part II: Full device model and circuit performance benchmarking [J].
Deng, Jie ;
Wong, H. -S. Philip .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) :3195-3205
[5]   A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application - Part I: Model of the intrinsic channel region [J].
Deng, Jie ;
Wong, H. -S. Philip .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) :3186-3194
[6]  
Dhande A., 2005, P INT C IEEE SCI EL, V13, P17
[7]  
Dubrova E., 1999, Proceedings '99. 17th NORCHIP Conference, P340
[8]  
Geunho Cho, 2009, 2009 IEEE Instrumentation and Measurement Technology Conference (I2MTC), P909, DOI 10.1109/IMTC.2009.5168580
[9]   Device model for ballistic CNFETs using the first conducting band [J].
Hashempour, Hamidreza ;
Lombardi, Fabrizio .
IEEE DESIGN & TEST OF COMPUTERS, 2008, 25 (02) :178-186
[10]   DEPLETION ENHANCEMENT CMOS FOR A LOW-POWER FAMILY OF 3-VALUED LOGIC-CIRCUITS [J].
HEUNG, A ;
MOUFTAH, HT .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (02) :609-616