A Quad-Band GSM/GPRS/EDGE SoC in 65 nm CMOS

被引：28

作者：

Darabi, Hooman ^{[1
]}

Chang, Paul ^{[1
]}

Jensen, Henrik ^{[1
]}

Zolfaghari, Alireza ^{[1
]}

Lettieri, Paul ^{[1
]}

Leete, John C. ^{[1
]}

Mohammadi, Behnam ^{[1
]}

Chiu, Janice ^{[1
]}

Li, Qiang ^{[1
]}

Chen, Shr-Lung ^{[1
]}

Zhou, Zhimin ^{[1
]}

Vadipour, M. ^{[1
]}

Chen, C. ^{[1
]}

Chang, Yuyu ^{[1
]}

Mirzaei, Ahmad ^{[1
]}

Yazdi, Ahmad ^{[1
]}

Nariman, Mohammad ^{[1
]}

Hadji-Abdolhamid, Amir ^{[1
]}

Chang, Ethan ^{[1
]}

Zhao, B. ^{[1
]}

Juan, Kevin ^{[1
]}

Suri, Puneet ^{[1
]}

Guan, C. ^{[1
]}

Serrano, L. ^{[1
]}

Leung, John ^{[1
]}

Shin, J. ^{[1
]}

Kim, J. ^{[1
]}

Tran, H. ^{[1
]}

Kilcoyne, P. ^{[1
]}

Vinh, H. ^{[1
]}

Raith, Eric ^{[1
]}

Koscal, M. ^{[1
]}

Hukkoo, Ajat ^{[1
]}

Hayek, C. ^{[1
]}

Rakhshani, V. ^{[1
]}

Wilcoxson, Charlie ^{[1
]}

Rofougaran, Maryam ^{[1
]}

Rofougaran, Ahmadreza ^{[1
]}

机构：

[1] Broadcom Corp, Irvine, CA 92617 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2011年 / 46卷 / 04期

关键词：

Cellular; CMOS; crystal oscillator; direct conversion; direct modulation; EDGE; EDGE SoC; 8PSK; GPRS; GMSK; GSM; low IF; polar; PLL; SoC; submicron CMOS; NOISE;

D O I：

10.1109/JSSC.2011.2109432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A quad-band 2.5G SoC integrating all the RF, DSP, ARM, audio and other baseband processing functions into a single 65 nm CMOS die is described. The paper focuses on the radio portion mostly, and addresses the challenges of realizing a complete GSM/EDGE SoC with the RF integrated along with the rest of digital baseband circuitry. Several circuit level as well as architectural techniques are presented to realize a very low-cost and low-power 2.5G radio while meeting the stringent cellular requirements with wide margin. The radio draws a battery current of 49 mA in the receiver-mode, and 86/77 mA in the GMSK/8PSK transmit-mode. The low-IF receiver achieves a sensitivity of -110 dBm at the antenna, corresponding to a noise figure of 2.4 dB at the device input. The 8PSK +/- 400 kHz modulation mask is -64.1/62.7 dBc for high/low bands, with an RMS EVM of 2.45/1.95%. The radio core area is 3.95 mm(2).

引用

页码：870 / 882

页数：13

共 15 条

[1]

*ABI RES, MOB DEV ANN MAR OV

[2]

*ABI RES, MOB DEV SEM MARK DAT

[3] Direct-conversion radio transceivers for digital communications [J].

Abidi, AA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1995, 30 (12) :1399-1410

[4]

APARICIO R, 2002, IEEE INT SOL STAT CI, P288

[5]

CHEHRAZI S, 2005, P CICC

[6] Noise in RF-CMOS mixers: A simple physical model [J].

Darabi, H ;

Abidi, AA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (01) :15-25

[7]

Darabi H., 2010, VLSI S JUN IN PRESS

[8]

Darabi H., 2008, PROC DIGEST TECHNICA, P206

[9]

Erdogan O. E., 2005, 2005 IEEE International Solid-State Circuits Conference (IEEE Cat. No. 05CH37636), P318

[10]

Li Puma Giuseppe, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, P210, DOI 10.1109/ISSCC.2008.4523131

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