Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

被引：12

作者：

Al'zhanova, A. ^{[1
]}

Dauletbekova, A. ^{[1
]}

Komarov, F. ^{[2
]}

Vlasukova, L. ^{[2
]}

Yuvchenko, V. ^{[2
]}

Akilbekov, A. ^{[1
]}

Zdorovets, M. ^{[3
]}

机构：

[1] LN Gumilyov Eurasian Natl Univ, 2 Satpayev Str, Astana 010008, Kazakhstan

[2] Belarusian State Univ, 4 Nezavisimosti Ave, Minsk 220030, BELARUS

[3] Inst Nucl Phys, Astana Branch, 2-1 Abylaikhan Ave, Astana 010008, Kazakhstan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2016年 / 374卷

关键词：

Amorphous SiO2 layer; Ion tracks; Chemical etching; Channel system;

D O I：

10.1016/j.nimb.2015.08.046

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The process of latent track etching in SiO2/Si structures irradiated with Ar-40 (38 MeV), Kr-84 (59 MeV) and Xe-132 (133 and 200 MeV) ions has been investigated. The experimental results of SiO2 etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：121 / 124

页数：4

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