Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

被引:12
作者
Al'zhanova, A. [1 ]
Dauletbekova, A. [1 ]
Komarov, F. [2 ]
Vlasukova, L. [2 ]
Yuvchenko, V. [2 ]
Akilbekov, A. [1 ]
Zdorovets, M. [3 ]
机构
[1] LN Gumilyov Eurasian Natl Univ, 2 Satpayev Str, Astana 010008, Kazakhstan
[2] Belarusian State Univ, 4 Nezavisimosti Ave, Minsk 220030, BELARUS
[3] Inst Nucl Phys, Astana Branch, 2-1 Abylaikhan Ave, Astana 010008, Kazakhstan
关键词
Amorphous SiO2 layer; Ion tracks; Chemical etching; Channel system;
D O I
10.1016/j.nimb.2015.08.046
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The process of latent track etching in SiO2/Si structures irradiated with Ar-40 (38 MeV), Kr-84 (59 MeV) and Xe-132 (133 and 200 MeV) ions has been investigated. The experimental results of SiO2 etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:121 / 124
页数:4
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