Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy

被引：3

作者：

Chen, WK ^{[1
]}

Lin, HC ^{[1
]}

Pan, YC ^{[1
]}

Ou, J ^{[1
]}

Shu, CK ^{[1
]}

Chen, WH ^{[1
]}

Lee, MC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 9A期

关键词：

Raman scattering; X-ray; InN; MOVPE;

D O I：

10.1143/JJAP.37.4870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600 degrees C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase tvas found to be dominant in the deposited InN film.

引用

页码：4870 / 4871

页数：2

共 8 条

[1]

BRODSKY MH, 1982, LIGHT SCATTERING SOL, V1, P227

[2] Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy [J].

Chen, WK ;

Pan, YC ;

Lin, HC ;

Ou, J ;

Chen, WH ;

Lee, MC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12B) :L1625-L1627

[3] Raman spectra of indium nitride thin films grown by microwave-excited metalorganic vapor phase epitaxy on (0001) sapphire substrates [J].

Kwon, HJ ;

Lee, YH ;

Miki, O ;

Yamano, H ;

Yoshida, A .

APPLIED PHYSICS LETTERS, 1996, 69 (07) :937-939

[4] Crystalline structure changes in GaN films grown at different temperatures [J].

Lin, HC ;

Ou, J ;

Chen, WK ;

Chen, WH ;

Lee, MC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (5B) :L598-L600

[5] PREPARATION AND OPTICAL-PROPERTIES OF GA1-XINXN THIN-FILMS [J].

OSAMURA, K ;

NAKA, S ;

MURAKAMI, Y .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3432-3437

[6] QUANTITATIVE-DETERMINATION OF HEXAGONAL MINORITY PHASE IN CUBIC GAN USING RAMAN-SPECTROSCOPY [J].

SIEGLE, H ;

ECKEY, L ;

HOFFMANN, A ;

THOMSEN, C ;

MEYER, BK ;

SCHIKORA, D ;

HANKELN, M ;

LISCHKA, K .

SOLID STATE COMMUNICATIONS, 1995, 96 (12) :943-949

[7] STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON GAAS SUBSTRATES - OBSERVATION OF THE ZINCBLENDE POLYTYPE [J].

STRITE, S ;

CHANDRASEKHAR, D ;

SMITH, DJ ;

SARIEL, J ;

CHEN, H ;

TERAGUCHI, N ;

MORKOC, H .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :204-208

[8] Basal-plane stacking faults and polymorphism in AlN, GaN, and InN [J].

Wright, AF .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5259-5261

← 1 →