High vertical breakdown strength with low specific on-resistance in AlGaN/AlN/GaN HEMTs on silicon

被引：18

作者：

Arulkumaran, S. ^{[1
]}

Vicknesh, S. ^{[1
,2
]}

Ng, G. I. ^{[2
]}

Liu, Z. H. ^{[1
,2
]}

Selvaraj, S. L. ^{[3
]}

Egawa, T. ^{[3
]}

机构：

[1] Nanyang Technol Univ, Temasek Labs, MMIC Design Ctr, Singapore 637553, Singapore

[2] Nanyang Technol Univ, Div Microelect, Sch EEE, Singapore 639798, Singapore

[3] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Nagoya, Aichi 4668555, Japan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 01期

关键词：

AlGaN; GaN; HEMTs; transistors; device characteristics; breakdown strength; on-resistance; FIELD-EFFECT TRANSISTORS; ALGAN/GAN HEMTS; SUBSTRATE; VOLTAGE;

D O I：

10.1002/pssr.201004465

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Off-state and vertical breakdown characteristics of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) on high-resistivity (HR)-Si substrate were investigated and analysed. Three-terminal off-state breakdown (BVgd) was measured as a function of gate-drain spacing (L-gd). The saturation of BVgd with L-gd is because of increased gate leakage current. HEMTs with L-gd = 6 mu m exhibited a specific onresistance R-DS[ON] of 0.45 m Omega cm(2). The figure of merit (FOM = BVgd2/R-DS[ON]) is as high as 2.0 x 10(8) V-2 Omega(-1) cm(2), the highest among the reported values for GaN HEMTs on Si substrate. A vertical breakdown of similar to 1000 V was observed on 1.2 mu m thick buffer GaN/AlN grown on Si substrate. The occurrence of high breakdown voltage is due to the high quality of GaN/AlN buffer layers on Si substrate with reduced threading dislocations which has been confirmed by transmission electron microscopy (TEM). This indicates that the AlGaN/AlN/GaN HEMT with 1.2 mu m thick GaN/AlN buffer on Si substrate is promising candidate for high-power and highspeed switching device applications. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：37 / 39

页数：3

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