Dielectric and conductivity properties of flux grown Ce doped NBT-BT single crystals

被引:9
作者
Sundari, S. Shanmuga [1 ,2 ]
Kumar, Binay [3 ]
Dhanasekaran, R. [1 ]
机构
[1] Anna Univ, Crystal Growth Ctr, Chennai 600025, Tamil Nadu, India
[2] PSGR Krishnammal Coll Women, Coimbatore 641004, Tamil Nadu, India
[3] Univ Delhi, Dept Phys & Astrophys, Crystal Lab, Delhi 110007, India
关键词
Relaxor ferroelectrics; Crystal growth; Dielectric relaxation; X-ray diffraction; Activation energy; MORPHOTROPIC-PHASE-BOUNDARY; ELECTRICAL-PROPERTIES; TRANSITIONS; BEHAVIOR; SYSTEM;
D O I
10.1016/j.physb.2019.411978
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
To study the effect of Ce in the NBT-BT lattice, 0.4 wt% of CeO2 was added to the 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO(3), in its morphotmpic phase boundary (MPB) composition, and the single crystals were grown by the flux method using Bi2O3 as a flux. The structural studies were carried by the XRD and Raman analyses. The dielectric constants were measured from room temperature to 400 degrees C for various frequencies in the range of 20 Hz-2 MHz. The anti-ferroelectric temperature region is increasing due to the addition of Ce in the NBT-BT. The maximum value of dielectric loss is also found to decrease from 0.4% to 0.1% due to the Ce addition. The conductivity and impedance analyses were carried out to study the relaxation process of Ce-NBT-BT single crystals.
引用
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页数:7
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