Dielectric and conductivity properties of flux grown Ce doped NBT-BT single crystals

被引：9

作者：

Sundari, S. Shanmuga ^{[1
,2
]}

Kumar, Binay ^{[3
]}

Dhanasekaran, R. ^{[1
]}

机构：

[1] Anna Univ, Crystal Growth Ctr, Chennai 600025, Tamil Nadu, India

[2] PSGR Krishnammal Coll Women, Coimbatore 641004, Tamil Nadu, India

[3] Univ Delhi, Dept Phys & Astrophys, Crystal Lab, Delhi 110007, India

来源：

PHYSICA B-CONDENSED MATTER | 2020年 / 582卷

关键词：

Relaxor ferroelectrics; Crystal growth; Dielectric relaxation; X-ray diffraction; Activation energy; MORPHOTROPIC-PHASE-BOUNDARY; ELECTRICAL-PROPERTIES; TRANSITIONS; BEHAVIOR; SYSTEM;

D O I：

10.1016/j.physb.2019.411978

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

To study the effect of Ce in the NBT-BT lattice, 0.4 wt% of CeO2 was added to the 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO(3), in its morphotmpic phase boundary (MPB) composition, and the single crystals were grown by the flux method using Bi2O3 as a flux. The structural studies were carried by the XRD and Raman analyses. The dielectric constants were measured from room temperature to 400 degrees C for various frequencies in the range of 20 Hz-2 MHz. The anti-ferroelectric temperature region is increasing due to the addition of Ce in the NBT-BT. The maximum value of dielectric loss is also found to decrease from 0.4% to 0.1% due to the Ce addition. The conductivity and impedance analyses were carried out to study the relaxation process of Ce-NBT-BT single crystals.

引用

页数：7

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