Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing

被引：40
作者：
Castelletto, S. [1 ]
Almutairi, A. F. M. [1 ]
Kumagai, K. [2 ,3 ]
Katkus, T. [2 ]
Hayasaki, Y. [3 ]
Johnson, B. C. [4 ]
Juomos, S. [2 ]
机构：
[1] RMIT Univ, Sch Engn, Melbourne, Vic 3000, Australia
[2] Swinburne Univ Technol, Swinbume Nanotechnol Facil, Hawthorn, Vic 3122, Australia
[3] Utsunomiya Univ, Ctr Opt Res & Educ, 7-1-2 Yoto, Utsunomiya, Tochigi, Japan
[4] Univ Melbourne, Sch Phys, Ctr Quantum Computat & Commun Technol, Melbourne, Vic 3001, Australia
来源：
OPTICS LETTERS | 2018年 / 43卷 / 24期
基金：
澳大利亚研究理事会;
关键词：
COLOR-CENTERS; SPINS; DEFECTS;
D O I：
10.1364/OL.43.006077
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Direct femtosecond laser writing has been used to produce localized regions of photo-luminescent emission in 4H- and 6H-silicon carbide (SiC). Arrays of active color centers were fabricated by different pulse laser energies in the sites of square grids at various depths (from surface level to 10 mu m below surface). We optically characterized the fabricated color centers using confocal imaging with 532 and 780 nm excitation, photo-luminescence spectroscopy, and lifetime decay at room temperature. We show that the technique can produce specifically the silicon vacancy color center emitting in the range 850-950 nm and other emitters in the 700 nm. This method can be adopted to engineer color centers in (SiC) at different depths in the material for single-photon generation, sensing, display fabrication, and light emitting diodes. (c) 2018 Optical Society of America
引用
收藏
页码：6077 / 6080
页数：4
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