Multilayer Grown High-Q On-chip Inductor for RF Applications

In this paper a multi-layer grown spiral inductor is presented with higher Quality factor by 72% and self resonance frequency (SRF) by 17%, over planar spiral inductors for RF applications at 3.65 GHz. Higher Quality factor of multi layer inductor over planar inductor is obtained at higher order frequencies for smaller outer diameters by taking substrate loss into consideration. There is no significant change in inductance for both the inductors. The area of cross-section for the proposed inductor is 420 mu mx420 mu m. Proposed Multi layer inductor is designed on silicon substrate and shape of conductor is considered as rectangular for simple and accurate analysis. Proposed inductor is designed and simulated in HFSS V12 for obtaining Quality factor and Inductance. Proposed inductor can be performed up to GHz frequency range and is efficiently suitable for Microwave/RF and wireless communication applications.