Highly polarized electrons from GaAs-GaAsP and InGaAs-AlGaAs strained-layer superlattice photocathodes

被引：66

作者：

Nishitani, T ^{[1
]}

Nakanishi, T

Yamamoto, M

Okumi, S

Furuta, F

Miyamoto, M

Kuwahara, M

Yamamoto, N

Naniwa, K

Watanabe, O

Takeda, Y

Kobayakawa, H

Takashima, Y

Horinaka, H

Matsuyama, T

Togawa, K

Saka, T

Tawada, M

Omori, T

Kurihara, Y

Yoshioka, M

Kato, K

Baba, T

机构：

[1] Nagoya Univ, Grad Sch Sci, Dept Phys, Nagoya, Aichi 4648602, Japan

[2] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Nagoya, Aichi 4648603, Japan

[3] Osaka Prefecture Univ, Fac Engn, Dept Phys & Elect, Osaka 5998531, Japan

[4] Harima Inst, R Kagaku Kenkyusho RIKEN SPring 8, Mikazuki, Hyogo 6795148, Japan

[5] Daido Inst Technol, Nagoya, Aichi 4578531, Japan

[6] High Energy Accelerator Res Org, Tsukuba, Ibaraki 3050801, Japan

[7] Daido Steel Co Ltd, Nagoya, Aichi 4578531, Japan

[8] NEC Corp Ltd, Silicon Syst Res Labs, Kanagawa 2201198, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 09期

关键词：

D O I：

10.1063/1.1886888

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs-GaAsP and InGaAs-AlGaAs strained-layer superlattice photocathodes are presented as emission sources for highly polarized electron beams. The GaAs-GaAsP cathode achieved a maximum polarization of 92(+/- 6)% with a quantum efficiency of 0.5%, while the InGaAs-AlGaAs cathode provides a higher quantum efficiency (0.7%) but a lower polarization [77(+/- 5)%]. Criteria for achieving high polarization using superlattice photocathodes are discussed based on experimental spin-resolved quantum efficiency spectra. (C) 2005 American Institute of Physics.

引用

页数：6

共 20 条

[1] Spin polarization spectra of strained superlattices
Andreev, AD
Subashiev, AV
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) : 556 - 559
[2] STRAIN DEPENDENCE OF SPIN POLARIZATION OF PHOTOELECTRONS FROM A THIN GAAS LAYER
AOYAGI, H
HORINAKA, H
KAMIYA, Y
KATO, T
KOSUGOH, T
NAKAMURA, S
NAKANISHI, T
OKUMI, S
SAKA, T
TAWADA, M
TSUBATA, M
[J]. PHYSICS LETTERS A, 1992, 167 (04) : 415 - 420
[3] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
BASTARD, G
[J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697
[4] FOX MA, 2001, OPTICAL PROPERTIES S, P53
[5] *GLC GROUP, 2003, 139 GLC GROUP
[6] *JLC GROUP, 1997, 971 JLC GROUP KEK
[7] A HIGH POLARIZATION AND HIGH QUANTUM EFFICIENCY PHOTOCATHODE USING A GAAS-ALGAAS SUPERLATTICE
KURIHARA, Y
OMORI, T
TAKEUCHI, Y
YOSHIOKA, M
NAKANISHI, T
OKUMI, S
TAWADA, M
TOGAWA, K
TSUBATA, M
BABA, T
MIZUTA, M
ALLEY, RK
AOYAGI, H
CLENDENIN, JE
FRISCH, JC
MULHOLLAN, GA
SAEZ, PJ
SCHULTZ, DC
TANG, H
WITTE, KH
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01): : 355 - 358
[8] Measurement of the deformation potentials for GaAs using polarized photoluminescence
Mair, RA
Prepost, R
Garwin, EL
Maruyama, T
[J]. PHYSICS LETTERS A, 1998, 239 (4-5) : 277 - 284
[9] Spin-dependent luminescence of highly polarized electrons generated by two-photon absorption in semiconductors
Matsuyama, T
Horinaka, H
Wada, K
Kondo, T
Hangyo, M
Nakanishi, T
Okumi, S
Togawa, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (6A): : L555 - L557
[10] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 118 - 125

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