Morphological and optical study of thin films of CuAlS2 deposited by metal organic chemical vapour deposition technique

被引:10
作者
Damisa, J. [1 ]
Olofinjana, B. [2 ]
Ebomwonyi, O. [1 ]
Bakare, F. [1 ,3 ]
Azi, S. O. [1 ]
机构
[1] Univ Benin, Dept Phys, Benin, Nigeria
[2] Obafemi Awolowo Univ, Dept Phys & Engn Phys, Ife 220005, Nigeria
[3] Univ Manchester, Sch Mat, Manchester, Lancs, England
关键词
MOCVD; precursor; copper aluminium sulphide; thin film; characterization; band gap; TEMPERATURE; GROWTH;
D O I
10.1088/2053-1591/aa851d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Single solid source precursor of Copper-Aluminium dithiocarbamate was prepared and characterized by infrared spectroscopy. Thin films of copper aluminium sulphide were deposited on the substrate (soda lime glass) using metal organic chemical vapour deposition (MOCVD) technique within temperature ranges of 420 and 450 degrees C through the pyrolysis of the prepared precursor. Morphological and optical characterizations were then carried out. Morphological study carried out using scanning electron microscopy (SEM) showed that the deposited films are dense and polycrystalline in nature, uniform with the particle size distribution of the grains decreasing with increase in temperature. A direct optical energy gap of 3.28 and 2.88 eV were obtained for films deposited at 420 and 450 degrees C respectively. Other optical constants were found to increase as temperature increased.
引用
收藏
页数:10
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