System control and management for low-cost high-volume GaAs manufacturing

被引：0

作者：

Adams, KM ^{[1
]}

Coe, ME ^{[1
]}

Della-Morrow, CD ^{[1
]}

Flynn, KP ^{[1
]}

Hertle, J ^{[1
]}

Klingbeil, LS ^{[1
]}

Ploeger, JB ^{[1
]}

Tebelak, DC ^{[1
]}

机构：

[1] Motorola Semicond Prod Sector, CS 1, Tempe, AZ 85284 USA

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2003年 / 16卷 / 03期

关键词：

foundry; gallium compounds; heterojuction bipolar transistors; manufacturing; metal-semiconductor field-effect transistors (MESFETs); MODFETs; monolithic microwave integrated circuit (MMIC) power amplifiers; power metal-semiconductor field-effect transistors (MESFETs); technology planning;

D O I：

10.1109/TSM.2003.815627

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With a portfolio consisting of Metal Semiconductor Field Effect Transistors (MESFET), Pseudomorphic High Electron Mobility Transistors (pHEMT), Heterojunction Insulated Gate Field Effect Transistors (HIGFET), and Indium Gallium Phosphide Heterojunction, Bipolar Transistors (InGaP-HBT) technology, one factory has embarked on a mission to become a leader of cost and volume gallium arsenide (GaAs) manufacturing. Separate new product and new technology introduction systems have been developed and employed. Furthermore, several manufacturing and yield improvement systems, designed primarily for high-volume silicon factories, have been implemented. Additionally, a comprehensive cost-reduction project was implemented to bring wafer costs to benchmark levels.

引用

页码：390 / 398

页数：9

共 7 条

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