Studies on the dielectric and relaxor behavior of sol-gel derived barium strontium zirconate titanate thin films

被引:14
作者
Dixit, A.
Agrawal, D. C. [1 ]
Mohapatra, Y. N.
Majumder, S. B.
Katiyar, R. S.
机构
[1] Indian Inst Technol, Mat Sci Program, Kanpur 208016, Uttar Pradesh, India
[2] Univ Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA
关键词
relaxation phenomena; phase transitions; thin films; doping effects;
D O I
10.1016/j.matlet.2006.12.017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dielectric behavior of sol-gel derived Ba0.80Sr0.20ZrxTi1-x)O-3 (0.0 <= x <= 0.50) thin films is studied. A relaxor behavior is observed for x >= 0.35. The degree of relaxation increases with Zr content. The frequency dependence of the polar regions follows Vogel-Fulcher relation with a characteristic cooperative freezing at freezing temperature (T-f). Below T-f, a long range polarization ordering is likely to take place. The plausible mechanism of the relaxor behavior of BSZT thin films with Zr contents >= 0.35 has been proposed based on the measured temperature as well as frequency dependent dielectric data. The solid solution system is visualized as a mixture of Ti+4 rich polar regions and Zr+4 rich regions, with the increase in Zr content the volume fraction of the polar regions is progressively reduced. At and above 35.0 at.% Zr substitution the polar regions exhibit typical relaxor behavior. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:3685 / 3688
页数:4
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